1N5760 DATASHEET PDF

1N, datasheet for 1N – SILICON 3-LAYER BILATERAL TRIGGERS provided by New Jersey Semi-Conductor Products, Inc.. 1N pdf. 1NA,AA. Leakage Current. IBeth Direction!). (Applied Voltage • 14 Voml NJ Semi-Conductors encourages customers to verify that datasheets are . 1N Datasheet: Silicon 3-Layer Bilateral Triggers, 1N PDF Download New Jersey Semiconductor, 1N Datasheet PDF, Pinouts, Data Sheet.

1N Datasheet, 1N PDF, Pinouts, Circuit – New Jersey Semiconductor

Improved DC volume control. The following diagram explains the Motorola coding system: To simplify the task in selecting a “best” transistor, diode or other device for new designs, this dattasheet selection tables include all popular Motorola semicon- ductor devices and applications.

Megalogic provides several design approaches to bipolar LSI. A Of B in lieu of “IN” prefix. The variety of different trigger devices available complicates device selection.

Datsheet 47 38 For complete design data, consult the prime device data sheet. The 2N thru 2N transistors are designed for high- voltage, high-speed, power switching in inductive circuits where fall time is critical. Contact your nearest Motorola sales office for assistance in additional device selection and complete technical data.

(PDF) 1N5760 Datasheet download

These gate arrays keep costly layout and engineering manpower to a minimum. Current rating up to 50 A. The TO — is the most popular, high-volume plastic package and will meet most of your high-performance, low-cost requirements. Arrangement within each application group is in the order of increas- ing output power. Rated power output levels are 25 watts and 10 watts. Useful for critical applications such as wideband linear amplifiers or fast-rise pulse amplifiers. Truth labia and output option specified by uaar.

For complete information contact your nearest Motorola sales office or franchised distributor. The device types are listed in order of decreasing f T and increasing l c continuous. Full capability package, pre-tailored to customer. R 1NB 1N 1N Choppers and Switches datashert. The following index reflects the devices characterized in this section.

PDF 1N5761 Datasheet ( Hoja de datos )

The plastic transistors have monolithic construction and the metal package transistors are two chip construction. BoxPhoenix, Arizona The line includes many datsheet types. These devices are designed for your advanced RF engineering concepts.

Graphical and numerical methods of solution are clearly described, along with sample problems. Chain 1 – These devices can also ratasheet used for Broadband Medium Power 0.

The device types are listed in increasing order of l c continuous and V C e ratings. S 50 50 MM typ 60 25 0. Both amplifier and mixer devices are included. One such example is the MCM Operates input characteristics are needed. R 1NA 1N Motorola has developed LSI arrays of and gate complexities with typical speeds of 25 ns per gate.

Most 15n760 available in plastic and metal packages.